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QS5K2
Transistors
2.5V Drive Nch+Nch MOSFET
QS5K2
Structure
Silicon N-channel MOSFET
Dimensions (Unit : mm)
TSMT5
1.0MAX
Features
2.9
1.9
0.95 0.95
0.85
0.7
1) Low On-resistance.
3) Space saving, small surface mount package (TSMT5).
(1)
(5)
(2)
(4)
(3)
0.4
0.16
0~0.1
Applications
Switching
Packaging specifications
Inner circuit
Each lead has same dimensions
Abbreviated symbol : K02
Package
Taping
(5)
(4)
Type
Code
TR
? 2
? 2
QS5K2
Basic ordering unit (pieces)
3000
? 1
? 1
(1) Tr1 Gate
(2) Tr1 Source
(1)
(2)
(3)
Tr2 Source
(3) Tr2 Gate
Absolute maximum ratings (Ta=25 ° C)
<It is the same ratings for the Tr1 and Tr2>
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(4) Tr2 Drain
(5) Tr1 Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
30
12
Unit
V
V
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
I D
I DP ? 1
I S
I SP ? 1
± 2.0
± 8.0
0.8
3.2
A
A
A
A
Total power dissipation
Channel temperature
Range of storage temperature
P D
Tch
Tstg
? 2
1.25
0.9
150
? 55 to + 150
W / TOTAL
W / ELEMENT
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ?
Limits
100
139
Unit
° C/W
° C/W
? Mounted on a ceramic board
Rev.A
1/3
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